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In N and O implanted FZ-Si , or in Cz-Si grown in a N2
atmosphere [174,175], NNO complexes are formed by annealing
between 400 and 700C. Under these conditions, the intensity
of the localised vibrational modes (LVMs) due to the N-pair are
progressively reduced and three other IR-absorption lines at 1026, 996
and 801 cm-1 (room temperature) become increasingly
prominent. The intensities of these lines are correlated with each
other  and they are believed to be due to NNO complexes. This
is because Oi atoms become mobile around 400C and become
trapped by N-pair defects which are stable at this temperature. Beyond
C these complexes break up with the emission of
Oi leaving the N-pair. Cooling allows the NNO complexes to reform.
This dissociation and reformation is reversible.